| PART |
Description |
Maker |
| K4S641632E-TC75 K4S641632E K4S641632E-TC60 |
64Mbit SDRAM
|
Samsung semiconductor
|
| M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics
意法半导
|
| M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| YG962S6R |
SILICON DIODE
IC, FLASH, X8, 64MBIT, 8MB, 3V, TSOP
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M76DW63000A90ZT M76DW62000A M76DW62000A70ZT M76DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M72DW64000B90ZT M72DW64000B M72DW64000B70ZT M72DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| M5M44400AWJ M5M44400ATP M5M44400ART M5M44400AL M5M |
FAST PAGE MODE 4194304 BIT DYNAMIC RAM 快速页面模194304位动态随机存储器
From old datasheet system
(J/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IS41C16257 IS41C16257-35K IS41C16257-35KI IS41C162 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| MSM5116160F MSM5116160F-50JS MSM5116160F-60JS MSM5 |
1M X 16 FAST PAGE DRAM, 60 ns, PDSO44
1M X 16 FAST PAGE DRAM, 70 ns, PDSO42
1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
|
